I. Materials
- Gabriel Ferro, Universite Claude Bernard, Lyon, FRANCE
- Francesco La Via, National Research Council, Catania, ITALY
- Alexander Lebedev, Ioffe Institute, St Petersburg, RUSSIA
- Marc Portail, CRHEA, FRANCE
- Adolf Schoner, Ascatron, SWEDEN
- Hidekazu Tsuchida, CRIEPI, JAPAN
- Rositza Yakimova, Linkoping University, SWEDEN
- Al Burk, Wolfspeed, A Cree Company, USA
II. Characterization and modelling
- Peder Bergman, Linkoping University, SWEDEN
- Michael Dudley, Stony Brook University, USA
- Adam Gali, Budapest University of Technology and Economics, HUNGARY
- Ulrike Grossner, ETH, SWITZERLAND
- Tsunenobu Kimoto, Kyoto University, JAPAN
- Michael Krieger, Friedrich-Alexander-Universitat Erlangen, Nuremburg, GERMANY
- Jean-François Michaud, University of Tours, FRANCE
- Arnaud Yvon, STMicroelectronics, Tours, FRANCE
III. Processing
- Daniel Alquier, University of Tours, FRANCE
- Wolfgang Bergner, Infineon Technologies, AUSTRIA
- Peter Gammon, University of Warwick, UK
- Roberta Nipoti,CNR-IMM, ITALY
- Fabrizio Roccaforte, National Research Council Catania, ITALY
- Hiroshi Yano, Univ. Tsukuba, JAPAN
- Konstantinos Zekentes, Foundation for Research and Technology, Heraklion, GREECE
IV. Devices and Applications
- Alberto Castellazzi, University of Nottingham, UK
- Emmanuel Collard, STMicroelectronics, Tours FRANCE
- Phillipe Godignon, Centro Nacional de Microelectronica, Barcelona, SPAIN
- Andrea Irace, University of Naples Federico II, ITALY
- Phil Mawby, University of Warwick, UNITED KINGDOM
- Dethard Peters, Infineon Technologies, GERMANY
- LungViet Phung, National Institute of Applied Sciences, Lyon, FRANCE
- Dominique Planson, National Institute of Applied Sciences, Lyon, FRANCE
- Mario Saggio, ST, Catania, ITALY
- Yoshiyuki Yonezawa, National Institute of Advanced Industrial Science and Technology (AIST), JAPON