ECSCRM 2021 Invited posters
Mikako YODO (Kwansei Gakuin University, School of Science and Technology)
“Seed surface orientation dependence of the dislocation formation at the initial stage of physical vapor transport growth of 4H-SiC crystals”
Mikako Yodo was born in 1997 in Hyogo, Japan. She received the B.E. degree from Kwansei Gakuin University, Hyogo, Japan in 2020. She is currently pursuing the M.E. degree with the Department of Nanotechnology for Sustainable Energy, Kwansei Gakuin University. She is engaged in the study of defect formation during physical vapor transport growth of SiC bulk crystals. Her research also includes the development of novel characterization methods for extended defects in SiC crystals using micro-Raman scattering spectroscopy.
Yusuke YAMASHIRO (National Institute of Advanced Industrial Science and Technology, Japan)
“Behavior of Shockley-type Stacking Faults in SiC Superjunction MOSFET under Body Diode Current Stress”
Dr. YAMASHIRO received his PhD in Electrical and Electronic Engineering, Osaka University, Osaka, Japan 2014. Since 2014, he is working for Mitsubishi Electric Co., Ltd., JAPAN. His research deals with the reliability of SiC power devices. In 2018-2019, he worked in National Institute of Advanced Industrial Science and Technology (AIST, Japan) as Specified Concentrated Research Specialist under a joint research project with Tsukuba Power Electrics Constellations (TPEC). He also studied dislocations in SiC epilayers and the basic characteristics of SiC superjunction MOSFETs.
Kristijan Luka MLETSCHNIG (Infineon Technologies Austria AG)
“Aluminum activation in 4H-SiC measured on laterally contacted MOS capacitors with a buried current-spreading layer”
K. Luka Mletschnig is a PhD student at Infineon Austria AG where he is investigating the electrical activation of Aluminum in 4H-SiC in cooperation with the Fraunhofer Institute for Integrated Systems and Device Technology IISB Erlangen. He received his MSc degree in physics from the University of Vienna in 2018 researching vortex-pinning effects in cuprate superconductors on implantation induced defect columns.
Cuong VUONG VAN (Research Institute for Nanodevice and Bio Systems, Hiroshima University)
“500oC Operation Characteristics of 4H-SiC MOSFETs Differential Amplifier Circuit for Harsh Environment Applications”
V. V. Cuong was born in Bac Ninh, Vietnam, in 1985. He received the B.S. in Education of Physics from Hanoi National University of Education in 2007, in 2010, he received M.S. degrees in Electronics and Telecommunication Technology from the Vietnam National University, Hanoi, Vietnam, and he got Ph.D. degree in Semiconductor Electronics and Integration Science from Hiroshima University, Hiroshima, Japan, in 2020.
From 2007, he has become a Lecturer at Faculty of Physics in Hanoi National University of Education. Since 2020, he has been an Assistant Professor at the Research Institute for Nano Device and Bio Systems, Hiroshima University, Japan. His current interest is SiC integrated electronic circuits for high temperature and high radiation environment applications, including its process and device technologies, device design, reliabilities.