Monday, 16:50 / 17:10 – Invited Poster
YODO Mikado (Kwansei Gakuin University, School of Science and Technology) Seed surface orientation dependence of the dislocation formation at the initial stage of physical vapor transport growth of 4H-SiC crystals |
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YAMASHIRO Yusuke (National Institute of Advanced Industrial Science and Technology, Japan) Behavior of Shockley-type Stacking Faults in SiC Superjunction MOSFET under Body Diode Current Stress |
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MLETSCHNIG Kristijan Luka (Infineon Technologies Austria AG) Aluminum activation in 4H-SiC measured on laterally contacted MOS capacitors with a buried current-spreading layer |
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VUONG VAN Cuong (Research Institute for Nanodevice and Bio Systems, Hiroshima University) 500oC Operation Characteristics of 4H-SiC MOSFETs Differential Amplifier Circuit for Harsh Environment Applications |
Tu-P : Tuesday, 17:00 / 19:00 – Characterization and modelling
Tu-P-01 | BORGHESE Alessandro (Università degli Studi di Napoli Federico II) A Scalable SPICE-Based Compact Model for 1.7 kV SiC MOSFETs |
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Tu-P-02 | SHIMONO Takaya (MIRISE Technologies Corporation) I-V characteristics of power devices fabricated on bonded substrate of 3C-SiC poly crystal and 4H-SiC single crystal |
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Tu-P-03 | DANG Yifan (Department of Material Science and Engineering, Nagoya University) Numerical Investigation and Optimization of Long-term Stability for SiC Solution Growth |
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Tu-P-04 | RAMM Mark (STR Group, Inc. – Soft-Impact, Ltd.) Simulation Study of Crack Formation in Bulk SiC Crystals Grown by PVT |
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Tu-P-05 | LIM Minwho (Fraunhofer Institute for Integrated Systems and Device Technology IISB) Process-based Modeling of 4H-SiC Double-trench MOSFETs with Reshaped Trench Geometries |
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Tu-P-06 | WOERLE Judith (Phosphorous and Aluminum implantation for MOSFET manufacturing: Revisiting implantation dose rate and subsequent surface morphology) Phosphorous and Aluminum implantation for MOSFET manufacturing: Revisiting implantation dose rate and subsequent surface morphology |
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Tu-P-07 | MURAKAMI Eiichi (Kyushu Sangyo University) Significant Differences in BTI and TDDB Characteristics of Commercial Planar SiC-MOSFETs |
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Tu-P-08 | LEBEDEV Alexander (Ioffe Institute, St.-Petersburg, Russia) Effect of electron irradiation temperature on radiation resistance of SiC. |
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Tu-P-09 | LEBEDEV Alexander (Ioffe Institute) Effect of high energy (0.9 MeV) electron irradiation on high voltage 4H-SiC MOSFETs |
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Tu-P-10 | PRISTAVU Gheorghe (University “Politehnica” of Bucharest) Forward electrical behavior of SiC-Schottky diodes at deep cryogenic temperatures |
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Tu-P-11 | STREL’CHUK Anatoly (Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia) Current-voltage characteristics of Cr-SiC (4H) Schottky diodes |
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Tu-P-13 | LEHMEYER Johannes (Lehrstuhl für Angewandte Physik, Department Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Staudtstraße 7, 91058 Erlangen, Germany) Evaluation of 4H-SiC MOSFET transfer characteristics using machine-learning techniques |
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Tu-P-14 | MCPHERSON Joseph (Rensselaer Polytechnic Institute) Robustness of Semi-Superjunction 4H-SiC Power DMOSFETs to Single-Event Burnout from Heavy Ion Bombardment |
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Tu-P-15 | MATACENA Ilaria (University of Naples Federico II Napoli, Italy) SiC MOSFET C-V characteristics with (positive) biased Drain |
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Tu-P-16 | WALTL Michael (Institute for Microelectronics, TU Wien, Vienna, Austria) Performance Analysis of 4H-SiC CMOS Inverter Circuits employing Physical Charge Trapping Models |
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Tu-P-17 | DONATO Nazareno (University of Cambridge) On the Short Circuit electro-thermal failure of 1.2 kV 4H-SiC MOSFETs with 3D cell layouts |
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Tu-P-18 | NAYDENOV Kaloyan (University of Cambridge) Clamped and unclamped inductive switching of 3.3kV 4H-SiC MOSFETs with 3D cellular layouts |
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Tu-P-20 | PIERUCCINI Marco (IMM-National Research Council (Italy)) Evolution of the substitutional fraction on post-implantation annealing in Al/4H-SiC systems |
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Tu-P-21 | FOERTHNER Julietta (Fraunhofer Institute for Integrated Systems and Device Technology IISB) Optimization of photon collection efficiency from single silicon vacancy-center in 4H Silicon Carbide through lens structures |
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Tu-P-22 | FISICARO Giuseppe (Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi (CNR-IMM), Z.I. VIII Strada 5, I-95121 Catania, Italy) Kinetics of surface instabilities and extended defects during the epitaxial growth of cubic silicon carbide |
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Tu-P-24 | CSóRé András (Department of Atomic Physics, Budapest University of Technology and Economics) On the origin of anomalous electron spin resonance for vanadium defects in SiC |
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Tu-P-25 | FAZIO Tommaso (University of Catania and CNR-IMM, Catania) Theoretical/computational study of point defects in SiC and perspectives for Quantum Technologies |
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Tu-P-26 | NISHIHARA Yoshitaka (SHOWA DENKO K.K.) Evaluation of Defects in a SiC Substrate using the Photoluminescence Measurement Method |
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Tu-P-27 | HAN Lei (NITech) Injected photon density dependence of the surface recombination velocity for 4H-SiC |
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Tu-P-28 | KATO Masashi (Nagoya Institute of Technology) Injected photon density dependence of the surface recombination velocity for 4H-SiC |
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Tu-P-29 | MELI Alessandro (CNR-IMM, Strada VIII n.5, Zona Industriale, I-95121, Catania, Italy) Spectroscopical characterization of 4H-SiC thick epilayer for detection applications |
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Tu-P-30 | SCUDERI Viviana (CNR-IMM, VIII Strada, 5, 95121 Catania, Italy) 4H- and 6H-like stacking faults in 3C-SiC cross-section epilayer. Characterization by room-temperature ?-photoluminescence and ?-Raman analysis. |
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Tu-P-31 | SOUKHOJAK Andrey (SK Siltron CSS) Measurement of dislocation density in SiC wafers using production XRT |
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Tu-P-32 | CANNIZZARO Annalisa (CNR-IMM, Strada VIII n.5, Zona Industriale, I-95121, Catania, Italy) Dynamics of grain boundary in 3C-SiC grown on compliance substrates |
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Tu-P-33 | KALLINGER Birgit (Fraunhofer Institute for Integrated Systems and Device Technology IISB) Doping-related photoluminescence spectroscopy |
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Tu-P-34 | EL HAGEALI Sami (NREL) Multi-scale luminescence investigation of defects in 4H-SiC epilayers |
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Tu-P-35 | CHENG Qianyu (Stony Brook University) Dislocation Contrast Analysis on PVT-grown 4H-SiC through Synchrotron Grazing-incidence X-Ray Topogarphs and Ray-Tracing Simulation with Consideration of Surface Relaxation and X-Ray Absorption |
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Tu-P-36 | CHEN Zeyu (Stony Brook University) Synchrotron Rocking Curve X-ray Topography characterization of high energy implanted 4H-SiC lattice damage Poster link – Summary video |
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Tu-P-37 | GOBERT Christian (Fraunhofer Institute for Integrated Systems and Device Technology IISB) Writing structures in 4H-SiC and diamond for quantum technological applications with nanometer precision using a He/Ne ion microscope |
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Tu-P-38 | MUOIO ANNAMARIA (CNR-IMM, VIII Strada 5; LNS-INFN via S. Sofia Catania, Italy) Automatic image analysis of stackingfault |
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Tu-P-39 | ZIKO Mehadi Hasan (Tallinn University of Technology) Comparative Electrical Properties Study of Al-Foil/p- and n-Type 4H/6H-SiC Schottky Barrier Diode Fabricated Using Diffusion Welded Bonding |
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Tu-P-40 | LA VIA Francesco (CNR-IMM) Residual stress measurement by Raman on surface-micromachined monocrystalline 3C-SiC on silicon |
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Tu-P-41 | PINAULT-THAURY Marie-Amandine (GEMaC – CNRS / Université de Versailles) Nitrogen investigation by SIMS in two wide band gap semiconductors: Diamond and Silicon Carbide |
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Tu-P-43 | DOBROWOLSKI Artur (Lukasiewicz Research Network – Institute of Microelectronics and Photonics) Determining the number of graphene layers based on Raman response of the SiC substrate |
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Tu-P-44 | FUKUNAGA Shuhei (Osaka Univ.) Identification of High Resolution Transient Thermal Network Model for Power Module Packages |
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Tu-P-45 | ABED ALI Fatme (Institut Vedecom / G2Elab) Design of an integrated power module for Silicon Carbide MOSFET with self-compensation of the magnetic field |
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Tu-P-46 | LIU Yafei (Stony Brook University) Synchrotron X-Ray Rocking Curve Topography Characterization of Power Electronic GaN Materials |
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Tu-P-47 | HU Shanshan (Stony Brook University) Characterization of Prismatic Slip in AlN Crystals Grown by PVT |
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Tu-P-48 | LAZAR Mihai (Laboratory Light, Nanomaterials & Nanotechnologies, CNRS ERL 7004, University of Technology of Troyes, 12 rue Marie Curie, 10004 Troyes, France) Enhanced Resonant Raman scattering of GaN functional layers using Al thin films – a versatile tool for multilayer structure analysis |
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Tu-P-49 | ZHOU Ziwei (Shenzhen BASiC semiconductor Ltd.) Raman characterization of Carbon cluster in the interface of 4H-SiC Power Devices by different Annealing method |
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Tu-P-50 | VIDARSSON Arnar (University of Iceland) Observation of fast near-interface traps in 4H-SiC MOS capacitors using capacitance voltage analysis at cryogenic temperatures |
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Tu-P-51 | RENZ Arne Benjamin (University of Warwick, School of Engineering) The improved reliability performance of post-deposition annealed ALD-SiO2 |
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Tu-P-81 | MARTINS Maria (Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute) Probing the SiO2/SiC interface with nanometer depth resolution using low-energy muons |
Tu-P : Tuesday, 17:00 / 19:00 – Processing
Tu-P-52 | FROMMELT Sebastian (SGL Carbon GmbH) Graphite-based solutions for?SiC?PVT furnaces and?SiC?epitaxy reactors |
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Tu-P-53 | KASHIMURA Tomoyuki (Institute of Industrial Science, The University of Tokyo) The fundamental study of liquid phase epitaxy of SiC using Gibbs-Thomson effect of SiC particles in Si-Cr solvents |
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Tu-P-54 | AOKI Hideto (Institute of Industrial Science, The University of Tokyo) Step structures of 4H-SiC (000-1) in Si and Si-40mol%Cr solvents at 1873 K after interface reconstruction |
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Tu-P-56 | KAWANISHI Sakiko (Tohoku University) SiC solution growth using SiC/graphite gradient crucible |
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Tu-P-59 | PEZOLDT Joerg (FG Nanotechnologie, TU Ilmenau, Germany) Silicon Carbide – Graphene nano-gratings on 4H and 6H semi-insulating SiC |
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Tu-P-60 | YU Sean (Applied Materials) Highest Quality and Repeatability for Single Wafer 150mm SiC CMP designed for High Volume Manufacturing |
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Tu-P-61 | MAY Alexander (Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB) Via size-dependent properties of TiAl ohmic contacts on 4H-SiC |
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Tu-P-62 | BADALà Paolo (STMicroelectronics, Zona Industriale Stradale Primosole, 50 – 95121 Catania, Italy) Structural and electrical characterization of Ni-based ohmic contacts on 4H-SiC formed by solid-state laser annealing |
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Tu-P-63 | LA MAGNA Antonino (CNR-IMM) Multiscale simulations of plasma etching in silicon carbide structures |
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Tu-P-64 | TAKEUCHI Riku (Research Institute for Nanodevices and Bio Systems, Hiroshima University) High-Selective Deep RIE of 4H-SiC with SiO2 Hard Mask in Cl2/HBr/O2 Plasma Chemistry |
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Tu-P-65 | KAWAMURA Kazuya (Research Institute for Nanodevice and Bio Systems, Hiroshima University) Coverage Enhancement of Si-SOI/4H-SiC Wafer Direct Bonding by SiO2 insertion |
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Tu-P-66 | SUNDARAMOORTHY Vinoth (Hitachi ABB Power Grids) Ohmic contact formation on 4H-SiC with a low thermal budget by means of Schottky barrier modulation |
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Tu-P-67 | ROCCAFORTE Fabrizio (CNR-IMM, Strada VIII n.5, Zona Industriale, I-95121, Catania, Italy) Pt Schottky contacts on 3C-SiC layers grown on 4°-off-axis 4H-SiC |
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Tu-P-68 | MOKHTARZADEH Mahsa (Laboratory for Micro and Nanotechnology (LMN), Paul Scherrer Institute) Optimization of Etching Processes for Fabrication of Smooth Silicon Carbide Thin Membranes for applications in Quantum Technology |
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Tu-P-70 | LAZAR Mihai (Light, nanomaterials, nanotechnologies (L2n) UTT- ERL CNRS 7004) Ion Implantation Point Defect Engineering in SiC for Photonic Quantum Technology |
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Tu-P-71 | YASUDA Yuto (Nagoya Institute of Technology) Observation of carrier lifetime distribution in GaN vertical pn diode |
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Tu-P-72 | ANZALONE Ruggero (STmicroelectronics) Impact of dislocation on warpage of thinned 4H-SiC wafers |
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Tu-P-73 | FIORENZA Patrick (CNR-IMM) 2D-imaging of the 4H-SiC MOSFET channel by scanning capacitance microscopy |
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Tu-P-74 | BERGER Clément (GREMAN UMR 7347 – CNRS, Université de Tours) Optimisation of Ti ohmic contacts formed on 4H-SiC by laser annealing |
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Tu-P-75 | GAY Xavier (RENA Technologies GmbH) A Novel Tool Layout and Process for Single Side Wet Electrochemical Processing of Porous Silicon Carbide Layers Without Edge Exclusion |
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Tu-P-76 | KLUG Gerald (DISCO HI-TEC EUROPE GmbH) Total Silicon Carbide solution from wafer making to device making |
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Tu-P-77 | CALVO RUIZ Diego (Meister Abrasives AG) Novel Vitrified-bond Ultra-fine Grinding Technology for SiC Polishing |
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Tu-P-78 | GEMMILL William (Pureon, Inc.) Advancements in Polishing Pad Technology for the SiC Wafering Process |
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Tu-P-79 | VIVONA Marilena (CNR-IMM) Electrical characterization of W-based Schottky barrier on 4H-SiC |
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Tu-P-80 | MOEGGENBORG Kevin (SK Siltron CSS) Polish Scratch Simulation vs. Polish Tool Type |
We-P : Wednesday, 17:00 / 19:00 – Devices and applications
We-P-01 | MATHIEU DE VIENNE Cédric (SuperGrid institute, G2Elab) Experimental investigation of a 10 kV-70A switch with six SiC-MOSFETs in a series-connection configuration |
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We-P-03 | HOFFMANN Felix (University of Bremen) Comparison of the H3TRB Performance of Silicon and Silicon Carbide Power Modules |
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We-P-04 | SHANMUGAM Priyadarshini (GREMAN Laboratory UMR-CNRS 7347, University of Tours, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France) A New Approach in the Field of Hydrogen Gas Sensing using MEMS based 3C-SiC-µCs |
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We-P-05 | JONES Ben (Swansea University) Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application |
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We-P-06 | NAKATA Shuhei (Kanazawa Institute of Technology) Self-turn-on Phenomenon of SiC MOSFETs by Fast Switching Operation |
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We-P-07 | ZHANG Luyang (University of Warwick) Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Gate Design |
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We-P-08 | SHIMA Takuma (Research Institute for Nanodevice and Biosystems, Hiroshima University) Effects of MOS charges on roll-off characteristics of 4H-SiC short channel n/p MOSFETs |
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We-P-09 | HITCHCOCK Collin (GE Research) Aluminum Acceptor Ionization Energies in 4H SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants |
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We-P-10 | MOHAMED Torky (Rensselaer Polytechnic Institute) Determination of Effective Critical Breakdown Field in 4H-SiC Superjunction Devices |
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We-P-11 | MUOIO Annamaria (IMM-CNR; LNS – INFN, Catania) Neutron detection study through simulations with FLUKA |
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We-P-12 | VALERO Valentin (Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France) Comparison of the response of SiC-based detectors for fast neutron measurements at monoenergetic neutron fields |
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We-P-13 | MENDY Simon (University of Warwick) Electrothermal Modelling and Measurements of Parallel-Connected VTH Mismatched SiC MOSFETs under Inductive Load Switching |
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We-P-14 | TORKY Mohamed (Rensselear Polytechnic Institute) Comparative Performance Evaluation of Conventional and Superjunction Vertical 4H-SiC High-Voltage Power MOSFETs |
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We-P-15 | STEFANAKIS Dionysios (Aristotle University of Thessaloniki) Determining 4H-SiC carrier lifetime values for temperature range 300K to 865K via TCAD simulation |
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We-P-16 | MAEDA Noriyuki (Kyoto University) SPICE model reproducing the static and dynamic characteristics of a SiC complementary JFET inverter from 300 to 573 K |
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We-P-17 | PASCU Razvan (National Institute for Research and Development in Microtechnologies – IMT Bucharest and University “POLITEHNICA” Bucharest) Differential hydrogen sensor based on SiC MOS capacitors |
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We-P-18 | TIAN Xiaoli (Institute of Microelectronics of Chinese Academy of Sciences) Design and Characterization of 10kV High Voltage 4H-SiC P-channel IGBTs with Low VF |
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We-P-19 | SCHARNHOLZ Sigo (ISL) Investigation of SiC thyristors with varying amplifying gate design |
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We-P-20 | KALININA Evgenia (Ioffe Institute, St.-Petersburg, Russia) 4H-SiC photodetectors irradiated with Argon ions |
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We-P-22 | OTERO UGOBONO Sofía (IMB-CNM-CSIC) Monolithic integration of graphene in SiC radiation sensors for harsh-environment applications |
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We-P-23 | BAKER Guy (University of Warwick) A study of 4H-SiC semi-superjunction rectifiers for practical realisation |
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We-P-24 | KARKER Olfa (IMEP-LaHC & LMGP, Univ. Grenoble Alpes, CNRS, Grenoble INP, F-38000 Grenoble, France) Modeling and development of 4H-SiC nanowire/nanoribbon biosensing FET structures |
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We-P-25 | SUNDARAMOORTHY Vinoth (Hitachi ABB Powergrids) Performance comparison of 6.5 kV SiC PiN diode with 6.5 kV SiC JBS and Si diodes |
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We-P-26 | RENZ Arne Benjamin (University of Warwick) A study of high resistivity semi-insulating 4H-SiC epilayers formed via the implantation of germanium and vanadium |
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We-P-27 | CORDIER Yvon (CRHEA-CNRS) AlGaN/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC/ Si(111) for RF applications |
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We-P-28 | CUONG Vuong Van (Research Institute for Nanodevice and Bio Systems, Hiroshima University) High-Temperature Reliability of Integrated Electronic Circuit Based on 4H-SiC MOSFET with TiN Metal Gate |
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We-P-29 | MEGURO Tatsuya (Research Institute for Nanodevice and Bio Systems, Hiroshima University) Output Characteristics of SOI-Si/4H-SiC Hybrid Pixel Device for Radiation Hardend CMOS Image Sensors |
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We-P-30 | RIM You Seung (Sejong University) Confined magnetic field sputtering-based Nickel films on ultrawide bandgap ?-Ga2O3 for Schottky barrier modulation and high thermal stability |
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We-P-31 | KOTAMRAJU Siva (IIIT sricity) Analysis of interface trap distribution for Pd/AlN/6H-SiC and Pd/HfO2/6H-SiC MOS capacitor sensors at 700K |
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We-P-32 | BERA Lakshmi Kanta (Institute of Microelectronics (IME) – A*STAR, Singapore) Multi-layer high-K gate stack materials for low Dit 4H-SiC based MOSFETs |
We-P : Wednesday, 17:00 / 19:00 – Materials
We-P-33 | MOCHIZUKI Kazuhiro (Hosei University) Models for impurity incorporation during vapor-phase epitaxy |
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We-P-34 | KIM Tae Hee (KC industrial) 4-inch SI-SiC Single Crystals Grown using high purity ?-SiC powder |
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We-P-35 | KIM Tae Hee (KC industrial) 4-inch N-type SiC Single Crystals Grown using high purity ?-SiC powder |
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We-P-36 | LEE Chae young (KC industrial) 2-inch SI-SiC Single Crystals Grown using ?-SiC and ?-SiC powder mixed source |
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We-P-37 | YAMOCHI Tsuyoshi (Kwansei Gakuin University, School of Science and Technology) Stacking fault formation at the interface between the seed and grown crystal of physical vapor transport-grown 4H-SiC crystals |
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We-P-38 | HASHIGUCHI Takato (Kwansei Gakuin University, School of Science and Technology) Enhanced nitrogen incorporation in the <11-20> directions on the (000-1) facet of 4H-SiC crystals |
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We-P-40 | NAKANO Masataka (Kwansei Gakuin University, School of Science and Technology) Investigation of the step structure on the (000-1) facet of physical vapor transport-grown 4H-SiC crystals on an off-axis seed crystal |
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We-P-41 | MANNING Ian (SK Siltron CSS) Advances in 200 mm 4H SiC wafer development and production |
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We-P-42 | MANABE MORINO (Kwansei Gakuin University, School of Science and Technology) Investigation of the deflection behavior of threading dislocations in 4H-SiC crystals |
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We-P-43 | ZHU Can (Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and System for Sustainability (IMaSS), Nagoya University) 6-inch SiC crystal growth by solution method assisted with AI technology |
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We-P-44 | STEINER Johannes (Crystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nuremberg) Applicability of birefringence measurements for the determination of bulk properties of silicon carbide wafers |
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We-P-45 | PEZOLDT Joerg (FG Nanotechnologie, TU Ilmenau) Cubic silicon carbide formation using reactive silicon-carbon multilayers |
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We-P-46 | IHLE Jonas (Crystal Growth Lab, Materials Department 6 (i-meet), University of Erlangen-Nürnberg (FAU)) In-situ monitoring of unintentionally released nitrogen gas in the initial PVT Silicon Carbide growth process using mass spectrometry |
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We-P-47 | KöHLER Johannes (Crystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nuremberg) Chemical Vapor Deposition of 3C-SiC on [100] oriented Silicon at low Temperature < 1200°C for photonic applications |
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We-P-48 | KOLLMUSS Manuel (Crystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nuremberg, Martensstr. 7, D-91058 Erlangen, Germany) Large area growth of cubic silicon carbide using closed space PVT by application of homoepitaxial seeding |
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We-P-49 | PORTAIL Marc (CNRS-CRHEA) Designing SiC based CMUT structures: an original approach and related material issues |
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We-P-50 | JOKUBAVICIUS Valdas (Department of Physics, Chemistry and Biology, Linköping University) Growth of 3C-SiC on 2-inch hexagonal SiC using sublimation epitaxy |
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We-P-51 | SAZAWA Hiroyuki (National Institute of Advanced Industrial Science and Technology, Advanced Power Electronics Research Center) 3C-SiC with less rotational variants mixing grown on 4H-SiC C-face substrate by CVD |
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We-P-52 | RANA Tawhid (SK Siltron CSS) Interfacial Dislocation reduction by optimizing process condition in 4H-SiC epitaxy |
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We-P-53 | GHEZELLOU Misagh (Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden) The effect of carbon precursor on the evolution of surface morphology of 4H-SiC epitaxial layers during the growth |
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We-P-54 | ZIELINSKI Marcin (NOVASiC) Vanadium incorporation in 3C-SiC epilayers and its consequences for electrical properties of 3C-SiC material. |
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We-P-55 | FAN Wei (Momentive Technologies) Impact of Surface Emissivity on Crystal Growth and Epitaxial Deposition |
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We-P-56 | PARTHASARATHY Shravan Kumar (Fraunhofer Institute for Integrated Systems and Device Technology IISB) Environmental effects on the coherence time of VSi color centers in 4H-SiC |
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We-P-57 | TAIBI Ibrahim (Applied Materials laboratory (AML), University Djiilali liabes of Sidi Belabbes, 22000 Sidi Belabbes, Algeria) Structural, electronic and optical properties of 6H-SiC and 3C-SiC with the application in solar cell devices |
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We-P-58 | MALIKA DIAFI (Physic Laboratory of Thin Films and Applications (LPCMA), University of Biskra, Algeria) Study of Zn–Co Alloy Coatings Modified by Nano- TiO2 Particles Incorporation |
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We-P-59 | GUO Ling (SHOWA DENKO K.K.) Evaluation of Line-shape Defect in Epitaxial Wafer |
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We-P-60 | FUKUI Takuya (Nagoya Institute of Technology) Carrier lifetime of 4H-SiC SJ-UMOSFET |
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We-P-61 | ANZALONE Ruggero (STMicroelectronics) High temperature etching for threading dislocation investigation on GaN epi-layer |
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We-P-62 | LEBEDEV Alexander (Ioffe Institute) Study of 3C SiC films grown by sublimation on 4H-SiC semiinsulated substrates. |
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We-P-63 | CHUNG Gil (SK Siltron CSS) Decoration and density changes of dislocations in PVT-grown SiC boules with post-growth thermal processing |
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We-P-65 | KRANERT Christian (Fraunhofer Institute for Integrated Systems and Device Technology IISB) Non-destructive, cost-efficient, and fast full wafer defect quantification for SiC by X-ray topography |
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We-P-64 | KARHU Robin (Oak Ridge Associated Universities (ORAU)) Creation of defect centers in 4H-SiC |
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We-P-66 | CALABRETTA Cristiano (CNR-IMM) Effect of N and Al doping on Stacking Faults reduction in 3C SiC |
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We-P-67 | NA Moonkyong (Korea Electrotechnology Research Institute) Stresses effect on the formation of ?-shaped dislocations in 4H-SiC epitaxial layer |
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We-P-68 | KODOLITSCH Elisabeth (Infineon Technologies Austria AG / Friedrich-Alexander University of Erlangen-Nuremberg) Impact of epitaxial defects on device behavior and their correlation to electrical characteristics in SiC devices |
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We-P-69 | HRICH Haitham (Laboratoire Charles Coulomb, UMR 5221, Univ Montpellier, CNRS, Montpellier, France) From buffer layer to graphene monolayer grown by sublimation on 4H-SiC (0001) large terraces |
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We-P-70 | JOUSSEAUME Yann (Laboratoire des Multimatériaux et Interfaces, Université de Lyon) Liquid Si-induced 4H-SiC surface structuring using a sandwich configuration |
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We-P-71 | SCHLICHTING Holger (Fraunhofer Institute for Integrated Systems and Device Technology IISB) The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability |