Monday, 16:50 / 17:10 – Invited Poster
| YODO Mikado (Kwansei Gakuin University, School of Science and Technology) Seed surface orientation dependence of the dislocation formation at the initial stage of physical vapor transport growth of 4H-SiC crystals |
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| YAMASHIRO Yusuke (National Institute of Advanced Industrial Science and Technology, Japan) Behavior of Shockley-type Stacking Faults in SiC Superjunction MOSFET under Body Diode Current Stress |
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| MLETSCHNIG Kristijan Luka (Infineon Technologies Austria AG) Aluminum activation in 4H-SiC measured on laterally contacted MOS capacitors with a buried current-spreading layer |
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| VUONG VAN Cuong (Research Institute for Nanodevice and Bio Systems, Hiroshima University) 500oC Operation Characteristics of 4H-SiC MOSFETs Differential Amplifier Circuit for Harsh Environment Applications |
Tu-P : Tuesday, 17:00 / 19:00 – Characterization and modelling
| Tu-P-01 | BORGHESE Alessandro (Università degli Studi di Napoli Federico II) A Scalable SPICE-Based Compact Model for 1.7 kV SiC MOSFETs |
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| Tu-P-02 | SHIMONO Takaya (MIRISE Technologies Corporation) I-V characteristics of power devices fabricated on bonded substrate of 3C-SiC poly crystal and 4H-SiC single crystal |
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| Tu-P-03 | DANG Yifan (Department of Material Science and Engineering, Nagoya University) Numerical Investigation and Optimization of Long-term Stability for SiC Solution Growth |
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| Tu-P-04 | RAMM Mark (STR Group, Inc. – Soft-Impact, Ltd.) Simulation Study of Crack Formation in Bulk SiC Crystals Grown by PVT |
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| Tu-P-05 | LIM Minwho (Fraunhofer Institute for Integrated Systems and Device Technology IISB) Process-based Modeling of 4H-SiC Double-trench MOSFETs with Reshaped Trench Geometries |
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| Tu-P-06 | WOERLE Judith (Phosphorous and Aluminum implantation for MOSFET manufacturing: Revisiting implantation dose rate and subsequent surface morphology) Phosphorous and Aluminum implantation for MOSFET manufacturing: Revisiting implantation dose rate and subsequent surface morphology |
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| Tu-P-07 | MURAKAMI Eiichi (Kyushu Sangyo University) Significant Differences in BTI and TDDB Characteristics of Commercial Planar SiC-MOSFETs |
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| Tu-P-08 | LEBEDEV Alexander (Ioffe Institute, St.-Petersburg, Russia) Effect of electron irradiation temperature on radiation resistance of SiC. |
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| Tu-P-09 | LEBEDEV Alexander (Ioffe Institute) Effect of high energy (0.9 MeV) electron irradiation on high voltage 4H-SiC MOSFETs |
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| Tu-P-10 | PRISTAVU Gheorghe (University “Politehnica” of Bucharest) Forward electrical behavior of SiC-Schottky diodes at deep cryogenic temperatures |
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| Tu-P-11 | STREL’CHUK Anatoly (Ioffe Institute, Polytekhnicheskaya 26, St. Petersburg 194021, Russia) Current-voltage characteristics of Cr-SiC (4H) Schottky diodes |
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| Tu-P-13 | LEHMEYER Johannes (Lehrstuhl für Angewandte Physik, Department Physik, Friedrich-Alexander-Universität Erlangen-Nürnberg (FAU), Staudtstraße 7, 91058 Erlangen, Germany) Evaluation of 4H-SiC MOSFET transfer characteristics using machine-learning techniques |
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| Tu-P-14 | MCPHERSON Joseph (Rensselaer Polytechnic Institute) Robustness of Semi-Superjunction 4H-SiC Power DMOSFETs to Single-Event Burnout from Heavy Ion Bombardment |
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| Tu-P-15 | MATACENA Ilaria (University of Naples Federico II Napoli, Italy) SiC MOSFET C-V characteristics with (positive) biased Drain |
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| Tu-P-16 | WALTL Michael (Institute for Microelectronics, TU Wien, Vienna, Austria) Performance Analysis of 4H-SiC CMOS Inverter Circuits employing Physical Charge Trapping Models |
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| Tu-P-17 | DONATO Nazareno (University of Cambridge) On the Short Circuit electro-thermal failure of 1.2 kV 4H-SiC MOSFETs with 3D cell layouts |
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| Tu-P-18 | NAYDENOV Kaloyan (University of Cambridge) Clamped and unclamped inductive switching of 3.3kV 4H-SiC MOSFETs with 3D cellular layouts |
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| Tu-P-20 | PIERUCCINI Marco (IMM-National Research Council (Italy)) Evolution of the substitutional fraction on post-implantation annealing in Al/4H-SiC systems |
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| Tu-P-21 | FOERTHNER Julietta (Fraunhofer Institute for Integrated Systems and Device Technology IISB) Optimization of photon collection efficiency from single silicon vacancy-center in 4H Silicon Carbide through lens structures |
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| Tu-P-22 | FISICARO Giuseppe (Consiglio Nazionale delle Ricerche, Istituto per la Microelettronica e Microsistemi (CNR-IMM), Z.I. VIII Strada 5, I-95121 Catania, Italy) Kinetics of surface instabilities and extended defects during the epitaxial growth of cubic silicon carbide |
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| Tu-P-24 | CSóRé András (Department of Atomic Physics, Budapest University of Technology and Economics) On the origin of anomalous electron spin resonance for vanadium defects in SiC |
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| Tu-P-25 | FAZIO Tommaso (University of Catania and CNR-IMM, Catania) Theoretical/computational study of point defects in SiC and perspectives for Quantum Technologies |
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| Tu-P-26 | NISHIHARA Yoshitaka (SHOWA DENKO K.K.) Evaluation of Defects in a SiC Substrate using the Photoluminescence Measurement Method |
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| Tu-P-27 | HAN Lei (NITech) Injected photon density dependence of the surface recombination velocity for 4H-SiC |
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| Tu-P-28 | KATO Masashi (Nagoya Institute of Technology) Injected photon density dependence of the surface recombination velocity for 4H-SiC |
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| Tu-P-29 | MELI Alessandro (CNR-IMM, Strada VIII n.5, Zona Industriale, I-95121, Catania, Italy) Spectroscopical characterization of 4H-SiC thick epilayer for detection applications |
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| Tu-P-30 | SCUDERI Viviana (CNR-IMM, VIII Strada, 5, 95121 Catania, Italy) 4H- and 6H-like stacking faults in 3C-SiC cross-section epilayer. Characterization by room-temperature ?-photoluminescence and ?-Raman analysis. |
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| Tu-P-31 | SOUKHOJAK Andrey (SK Siltron CSS) Measurement of dislocation density in SiC wafers using production XRT |
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| Tu-P-32 | CANNIZZARO Annalisa (CNR-IMM, Strada VIII n.5, Zona Industriale, I-95121, Catania, Italy) Dynamics of grain boundary in 3C-SiC grown on compliance substrates |
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| Tu-P-33 | KALLINGER Birgit (Fraunhofer Institute for Integrated Systems and Device Technology IISB) Doping-related photoluminescence spectroscopy |
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| Tu-P-34 | EL HAGEALI Sami (NREL) Multi-scale luminescence investigation of defects in 4H-SiC epilayers |
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| Tu-P-35 | CHENG Qianyu (Stony Brook University) Dislocation Contrast Analysis on PVT-grown 4H-SiC through Synchrotron Grazing-incidence X-Ray Topogarphs and Ray-Tracing Simulation with Consideration of Surface Relaxation and X-Ray Absorption |
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| Tu-P-36 | CHEN Zeyu (Stony Brook University) Synchrotron Rocking Curve X-ray Topography characterization of high energy implanted 4H-SiC lattice damage Poster link – Summary video |
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| Tu-P-37 | GOBERT Christian (Fraunhofer Institute for Integrated Systems and Device Technology IISB) Writing structures in 4H-SiC and diamond for quantum technological applications with nanometer precision using a He/Ne ion microscope |
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| Tu-P-38 | MUOIO ANNAMARIA (CNR-IMM, VIII Strada 5; LNS-INFN via S. Sofia Catania, Italy) Automatic image analysis of stackingfault |
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| Tu-P-39 | ZIKO Mehadi Hasan (Tallinn University of Technology) Comparative Electrical Properties Study of Al-Foil/p- and n-Type 4H/6H-SiC Schottky Barrier Diode Fabricated Using Diffusion Welded Bonding |
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| Tu-P-40 | LA VIA Francesco (CNR-IMM) Residual stress measurement by Raman on surface-micromachined monocrystalline 3C-SiC on silicon |
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| Tu-P-41 | PINAULT-THAURY Marie-Amandine (GEMaC – CNRS / Université de Versailles) Nitrogen investigation by SIMS in two wide band gap semiconductors: Diamond and Silicon Carbide |
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| Tu-P-43 | DOBROWOLSKI Artur (Lukasiewicz Research Network – Institute of Microelectronics and Photonics) Determining the number of graphene layers based on Raman response of the SiC substrate |
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| Tu-P-44 | FUKUNAGA Shuhei (Osaka Univ.) Identification of High Resolution Transient Thermal Network Model for Power Module Packages |
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| Tu-P-45 | ABED ALI Fatme (Institut Vedecom / G2Elab) Design of an integrated power module for Silicon Carbide MOSFET with self-compensation of the magnetic field |
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| Tu-P-46 | LIU Yafei (Stony Brook University) Synchrotron X-Ray Rocking Curve Topography Characterization of Power Electronic GaN Materials |
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| Tu-P-47 | HU Shanshan (Stony Brook University) Characterization of Prismatic Slip in AlN Crystals Grown by PVT |
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| Tu-P-48 | LAZAR Mihai (Laboratory Light, Nanomaterials & Nanotechnologies, CNRS ERL 7004, University of Technology of Troyes, 12 rue Marie Curie, 10004 Troyes, France) Enhanced Resonant Raman scattering of GaN functional layers using Al thin films – a versatile tool for multilayer structure analysis |
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| Tu-P-49 | ZHOU Ziwei (Shenzhen BASiC semiconductor Ltd.) Raman characterization of Carbon cluster in the interface of 4H-SiC Power Devices by different Annealing method |
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| Tu-P-50 | VIDARSSON Arnar (University of Iceland) Observation of fast near-interface traps in 4H-SiC MOS capacitors using capacitance voltage analysis at cryogenic temperatures |
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| Tu-P-51 | RENZ Arne Benjamin (University of Warwick, School of Engineering) The improved reliability performance of post-deposition annealed ALD-SiO2 |
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| Tu-P-81 | MARTINS Maria (Laboratory for Muon Spin Spectroscopy, Paul Scherrer Institute) Probing the SiO2/SiC interface with nanometer depth resolution using low-energy muons |
Tu-P : Tuesday, 17:00 / 19:00 – Processing
| Tu-P-52 | FROMMELT Sebastian (SGL Carbon GmbH) Graphite-based solutions for?SiC?PVT furnaces and?SiC?epitaxy reactors |
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| Tu-P-53 | KASHIMURA Tomoyuki (Institute of Industrial Science, The University of Tokyo) The fundamental study of liquid phase epitaxy of SiC using Gibbs-Thomson effect of SiC particles in Si-Cr solvents |
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| Tu-P-54 | AOKI Hideto (Institute of Industrial Science, The University of Tokyo) Step structures of 4H-SiC (000-1) in Si and Si-40mol%Cr solvents at 1873 K after interface reconstruction |
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| Tu-P-56 | KAWANISHI Sakiko (Tohoku University) SiC solution growth using SiC/graphite gradient crucible |
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| Tu-P-59 | PEZOLDT Joerg (FG Nanotechnologie, TU Ilmenau, Germany) Silicon Carbide – Graphene nano-gratings on 4H and 6H semi-insulating SiC |
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| Tu-P-60 | YU Sean (Applied Materials) Highest Quality and Repeatability for Single Wafer 150mm SiC CMP designed for High Volume Manufacturing |
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| Tu-P-61 | MAY Alexander (Fraunhofer-Institut für Integrierte Systeme und Bauelementetechnologie IISB) Via size-dependent properties of TiAl ohmic contacts on 4H-SiC |
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| Tu-P-62 | BADALà Paolo (STMicroelectronics, Zona Industriale Stradale Primosole, 50 – 95121 Catania, Italy) Structural and electrical characterization of Ni-based ohmic contacts on 4H-SiC formed by solid-state laser annealing |
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| Tu-P-63 | LA MAGNA Antonino (CNR-IMM) Multiscale simulations of plasma etching in silicon carbide structures |
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| Tu-P-64 | TAKEUCHI Riku (Research Institute for Nanodevices and Bio Systems, Hiroshima University) High-Selective Deep RIE of 4H-SiC with SiO2 Hard Mask in Cl2/HBr/O2 Plasma Chemistry |
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| Tu-P-65 | KAWAMURA Kazuya (Research Institute for Nanodevice and Bio Systems, Hiroshima University) Coverage Enhancement of Si-SOI/4H-SiC Wafer Direct Bonding by SiO2 insertion |
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| Tu-P-66 | SUNDARAMOORTHY Vinoth (Hitachi ABB Power Grids) Ohmic contact formation on 4H-SiC with a low thermal budget by means of Schottky barrier modulation |
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| Tu-P-67 | ROCCAFORTE Fabrizio (CNR-IMM, Strada VIII n.5, Zona Industriale, I-95121, Catania, Italy) Pt Schottky contacts on 3C-SiC layers grown on 4°-off-axis 4H-SiC |
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| Tu-P-68 | MOKHTARZADEH Mahsa (Laboratory for Micro and Nanotechnology (LMN), Paul Scherrer Institute) Optimization of Etching Processes for Fabrication of Smooth Silicon Carbide Thin Membranes for applications in Quantum Technology |
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| Tu-P-70 | LAZAR Mihai (Light, nanomaterials, nanotechnologies (L2n) UTT- ERL CNRS 7004) Ion Implantation Point Defect Engineering in SiC for Photonic Quantum Technology |
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| Tu-P-71 | YASUDA Yuto (Nagoya Institute of Technology) Observation of carrier lifetime distribution in GaN vertical pn diode |
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| Tu-P-72 | ANZALONE Ruggero (STmicroelectronics) Impact of dislocation on warpage of thinned 4H-SiC wafers |
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| Tu-P-73 | FIORENZA Patrick (CNR-IMM) 2D-imaging of the 4H-SiC MOSFET channel by scanning capacitance microscopy |
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| Tu-P-74 | BERGER Clément (GREMAN UMR 7347 – CNRS, Université de Tours) Optimisation of Ti ohmic contacts formed on 4H-SiC by laser annealing |
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| Tu-P-75 | GAY Xavier (RENA Technologies GmbH) A Novel Tool Layout and Process for Single Side Wet Electrochemical Processing of Porous Silicon Carbide Layers Without Edge Exclusion |
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| Tu-P-76 | KLUG Gerald (DISCO HI-TEC EUROPE GmbH) Total Silicon Carbide solution from wafer making to device making |
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| Tu-P-77 | CALVO RUIZ Diego (Meister Abrasives AG) Novel Vitrified-bond Ultra-fine Grinding Technology for SiC Polishing |
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| Tu-P-78 | GEMMILL William (Pureon, Inc.) Advancements in Polishing Pad Technology for the SiC Wafering Process |
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| Tu-P-79 | VIVONA Marilena (CNR-IMM) Electrical characterization of W-based Schottky barrier on 4H-SiC |
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| Tu-P-80 | MOEGGENBORG Kevin (SK Siltron CSS) Polish Scratch Simulation vs. Polish Tool Type |
We-P : Wednesday, 17:00 / 19:00 – Devices and applications
| We-P-01 | MATHIEU DE VIENNE Cédric (SuperGrid institute, G2Elab) Experimental investigation of a 10 kV-70A switch with six SiC-MOSFETs in a series-connection configuration |
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| We-P-03 | HOFFMANN Felix (University of Bremen) Comparison of the H3TRB Performance of Silicon and Silicon Carbide Power Modules |
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| We-P-04 | SHANMUGAM Priyadarshini (GREMAN Laboratory UMR-CNRS 7347, University of Tours, 16 rue Pierre et Marie Curie, BP 7155, 37071 Tours Cedex 2, France) A New Approach in the Field of Hydrogen Gas Sensing using MEMS based 3C-SiC-µCs |
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| We-P-05 | JONES Ben (Swansea University) Introducing Foundry-Compatible SiC and GaN Trench Processing Technologies for Reliable Automotive Application |
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| We-P-06 | NAKATA Shuhei (Kanazawa Institute of Technology) Self-turn-on Phenomenon of SiC MOSFETs by Fast Switching Operation |
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| We-P-07 | ZHANG Luyang (University of Warwick) Investigations of Short Circuit Robustness of SiC IGBTs with Considerations on Physics Properties and Gate Design |
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| We-P-08 | SHIMA Takuma (Research Institute for Nanodevice and Biosystems, Hiroshima University) Effects of MOS charges on roll-off characteristics of 4H-SiC short channel n/p MOSFETs |
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| We-P-09 | HITCHCOCK Collin (GE Research) Aluminum Acceptor Ionization Energies in 4H SiC for Low Dose, Ultra-High Energy (> 1MeV) Implants |
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| We-P-10 | MOHAMED Torky (Rensselaer Polytechnic Institute) Determination of Effective Critical Breakdown Field in 4H-SiC Superjunction Devices |
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| We-P-11 | MUOIO Annamaria (IMM-CNR; LNS – INFN, Catania) Neutron detection study through simulations with FLUKA |
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| We-P-12 | VALERO Valentin (Aix Marseille Univ, Université de Toulon, CNRS, IM2NP, Marseille, France) Comparison of the response of SiC-based detectors for fast neutron measurements at monoenergetic neutron fields |
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| We-P-13 | MENDY Simon (University of Warwick) Electrothermal Modelling and Measurements of Parallel-Connected VTH Mismatched SiC MOSFETs under Inductive Load Switching |
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| We-P-14 | TORKY Mohamed (Rensselear Polytechnic Institute) Comparative Performance Evaluation of Conventional and Superjunction Vertical 4H-SiC High-Voltage Power MOSFETs |
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| We-P-15 | STEFANAKIS Dionysios (Aristotle University of Thessaloniki) Determining 4H-SiC carrier lifetime values for temperature range 300K to 865K via TCAD simulation |
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| We-P-16 | MAEDA Noriyuki (Kyoto University) SPICE model reproducing the static and dynamic characteristics of a SiC complementary JFET inverter from 300 to 573 K |
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| We-P-17 | PASCU Razvan (National Institute for Research and Development in Microtechnologies – IMT Bucharest and University “POLITEHNICA” Bucharest) Differential hydrogen sensor based on SiC MOS capacitors |
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| We-P-18 | TIAN Xiaoli (Institute of Microelectronics of Chinese Academy of Sciences) Design and Characterization of 10kV High Voltage 4H-SiC P-channel IGBTs with Low VF |
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| We-P-19 | SCHARNHOLZ Sigo (ISL) Investigation of SiC thyristors with varying amplifying gate design |
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| We-P-20 | KALININA Evgenia (Ioffe Institute, St.-Petersburg, Russia) 4H-SiC photodetectors irradiated with Argon ions |
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| We-P-22 | OTERO UGOBONO Sofía (IMB-CNM-CSIC) Monolithic integration of graphene in SiC radiation sensors for harsh-environment applications |
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| We-P-23 | BAKER Guy (University of Warwick) A study of 4H-SiC semi-superjunction rectifiers for practical realisation |
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| We-P-24 | KARKER Olfa (IMEP-LaHC & LMGP, Univ. Grenoble Alpes, CNRS, Grenoble INP, F-38000 Grenoble, France) Modeling and development of 4H-SiC nanowire/nanoribbon biosensing FET structures |
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| We-P-25 | SUNDARAMOORTHY Vinoth (Hitachi ABB Powergrids) Performance comparison of 6.5 kV SiC PiN diode with 6.5 kV SiC JBS and Si diodes |
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| We-P-26 | RENZ Arne Benjamin (University of Warwick) A study of high resistivity semi-insulating 4H-SiC epilayers formed via the implantation of germanium and vanadium |
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| We-P-27 | CORDIER Yvon (CRHEA-CNRS) AlGaN/GaN High Electron Mobility Transistors grown by MOVPE on 3C-SiC/ Si(111) for RF applications |
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| We-P-28 | CUONG Vuong Van (Research Institute for Nanodevice and Bio Systems, Hiroshima University) High-Temperature Reliability of Integrated Electronic Circuit Based on 4H-SiC MOSFET with TiN Metal Gate |
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| We-P-29 | MEGURO Tatsuya (Research Institute for Nanodevice and Bio Systems, Hiroshima University) Output Characteristics of SOI-Si/4H-SiC Hybrid Pixel Device for Radiation Hardend CMOS Image Sensors |
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| We-P-30 | RIM You Seung (Sejong University) Confined magnetic field sputtering-based Nickel films on ultrawide bandgap ?-Ga2O3 for Schottky barrier modulation and high thermal stability |
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| We-P-31 | KOTAMRAJU Siva (IIIT sricity) Analysis of interface trap distribution for Pd/AlN/6H-SiC and Pd/HfO2/6H-SiC MOS capacitor sensors at 700K |
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| We-P-32 | BERA Lakshmi Kanta (Institute of Microelectronics (IME) – A*STAR, Singapore) Multi-layer high-K gate stack materials for low Dit 4H-SiC based MOSFETs |
We-P : Wednesday, 17:00 / 19:00 – Materials
| We-P-33 | MOCHIZUKI Kazuhiro (Hosei University) Models for impurity incorporation during vapor-phase epitaxy |
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| We-P-34 | KIM Tae Hee (KC industrial) 4-inch SI-SiC Single Crystals Grown using high purity ?-SiC powder |
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| We-P-35 | KIM Tae Hee (KC industrial) 4-inch N-type SiC Single Crystals Grown using high purity ?-SiC powder |
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| We-P-36 | LEE Chae young (KC industrial) 2-inch SI-SiC Single Crystals Grown using ?-SiC and ?-SiC powder mixed source |
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| We-P-37 | YAMOCHI Tsuyoshi (Kwansei Gakuin University, School of Science and Technology) Stacking fault formation at the interface between the seed and grown crystal of physical vapor transport-grown 4H-SiC crystals |
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| We-P-38 | HASHIGUCHI Takato (Kwansei Gakuin University, School of Science and Technology) Enhanced nitrogen incorporation in the <11-20> directions on the (000-1) facet of 4H-SiC crystals |
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| We-P-40 | NAKANO Masataka (Kwansei Gakuin University, School of Science and Technology) Investigation of the step structure on the (000-1) facet of physical vapor transport-grown 4H-SiC crystals on an off-axis seed crystal |
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| We-P-41 | MANNING Ian (SK Siltron CSS) Advances in 200 mm 4H SiC wafer development and production |
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| We-P-42 | MANABE MORINO (Kwansei Gakuin University, School of Science and Technology) Investigation of the deflection behavior of threading dislocations in 4H-SiC crystals |
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| We-P-43 | ZHU Can (Center for Integrated Research of Future Electronics (CIRFE), Institute of Materials and System for Sustainability (IMaSS), Nagoya University) 6-inch SiC crystal growth by solution method assisted with AI technology |
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| We-P-44 | STEINER Johannes (Crystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nuremberg) Applicability of birefringence measurements for the determination of bulk properties of silicon carbide wafers |
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| We-P-45 | PEZOLDT Joerg (FG Nanotechnologie, TU Ilmenau) Cubic silicon carbide formation using reactive silicon-carbon multilayers |
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| We-P-46 | IHLE Jonas (Crystal Growth Lab, Materials Department 6 (i-meet), University of Erlangen-Nürnberg (FAU)) In-situ monitoring of unintentionally released nitrogen gas in the initial PVT Silicon Carbide growth process using mass spectrometry |
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| We-P-47 | KöHLER Johannes (Crystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nuremberg) Chemical Vapor Deposition of 3C-SiC on [100] oriented Silicon at low Temperature < 1200°C for photonic applications |
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| We-P-48 | KOLLMUSS Manuel (Crystal Growth Lab, Materials Department 6 (i-meet), FAU Erlangen-Nuremberg, Martensstr. 7, D-91058 Erlangen, Germany) Large area growth of cubic silicon carbide using closed space PVT by application of homoepitaxial seeding |
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| We-P-49 | PORTAIL Marc (CNRS-CRHEA) Designing SiC based CMUT structures: an original approach and related material issues |
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| We-P-50 | JOKUBAVICIUS Valdas (Department of Physics, Chemistry and Biology, Linköping University) Growth of 3C-SiC on 2-inch hexagonal SiC using sublimation epitaxy |
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| We-P-51 | SAZAWA Hiroyuki (National Institute of Advanced Industrial Science and Technology, Advanced Power Electronics Research Center) 3C-SiC with less rotational variants mixing grown on 4H-SiC C-face substrate by CVD |
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| We-P-52 | RANA Tawhid (SK Siltron CSS) Interfacial Dislocation reduction by optimizing process condition in 4H-SiC epitaxy |
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| We-P-53 | GHEZELLOU Misagh (Department of Physics, Chemistry and Biology, Linköping University, SE-58183 Linköping, Sweden) The effect of carbon precursor on the evolution of surface morphology of 4H-SiC epitaxial layers during the growth |
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| We-P-54 | ZIELINSKI Marcin (NOVASiC) Vanadium incorporation in 3C-SiC epilayers and its consequences for electrical properties of 3C-SiC material. |
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| We-P-55 | FAN Wei (Momentive Technologies) Impact of Surface Emissivity on Crystal Growth and Epitaxial Deposition |
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| We-P-56 | PARTHASARATHY Shravan Kumar (Fraunhofer Institute for Integrated Systems and Device Technology IISB) Environmental effects on the coherence time of VSi color centers in 4H-SiC |
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| We-P-57 | TAIBI Ibrahim (Applied Materials laboratory (AML), University Djiilali liabes of Sidi Belabbes, 22000 Sidi Belabbes, Algeria) Structural, electronic and optical properties of 6H-SiC and 3C-SiC with the application in solar cell devices |
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| We-P-58 | MALIKA DIAFI (Physic Laboratory of Thin Films and Applications (LPCMA), University of Biskra, Algeria) Study of Zn–Co Alloy Coatings Modified by Nano- TiO2 Particles Incorporation |
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| We-P-59 | GUO Ling (SHOWA DENKO K.K.) Evaluation of Line-shape Defect in Epitaxial Wafer |
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| We-P-60 | FUKUI Takuya (Nagoya Institute of Technology) Carrier lifetime of 4H-SiC SJ-UMOSFET |
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| We-P-61 | ANZALONE Ruggero (STMicroelectronics) High temperature etching for threading dislocation investigation on GaN epi-layer |
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| We-P-62 | LEBEDEV Alexander (Ioffe Institute) Study of 3C SiC films grown by sublimation on 4H-SiC semiinsulated substrates. |
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| We-P-63 | CHUNG Gil (SK Siltron CSS) Decoration and density changes of dislocations in PVT-grown SiC boules with post-growth thermal processing |
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| We-P-65 | KRANERT Christian (Fraunhofer Institute for Integrated Systems and Device Technology IISB) Non-destructive, cost-efficient, and fast full wafer defect quantification for SiC by X-ray topography |
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| We-P-64 | KARHU Robin (Oak Ridge Associated Universities (ORAU)) Creation of defect centers in 4H-SiC |
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| We-P-66 | CALABRETTA Cristiano (CNR-IMM) Effect of N and Al doping on Stacking Faults reduction in 3C SiC |
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| We-P-67 | NA Moonkyong (Korea Electrotechnology Research Institute) Stresses effect on the formation of ?-shaped dislocations in 4H-SiC epitaxial layer |
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| We-P-68 | KODOLITSCH Elisabeth (Infineon Technologies Austria AG / Friedrich-Alexander University of Erlangen-Nuremberg) Impact of epitaxial defects on device behavior and their correlation to electrical characteristics in SiC devices |
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| We-P-69 | HRICH Haitham (Laboratoire Charles Coulomb, UMR 5221, Univ Montpellier, CNRS, Montpellier, France) From buffer layer to graphene monolayer grown by sublimation on 4H-SiC (0001) large terraces |
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| We-P-70 | JOUSSEAUME Yann (Laboratoire des Multimatériaux et Interfaces, Université de Lyon) Liquid Si-induced 4H-SiC surface structuring using a sandwich configuration |
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| We-P-71 | SCHLICHTING Holger (Fraunhofer Institute for Integrated Systems and Device Technology IISB) The Influence of Extended Defects in 4H-SiC Epitaxial Layers on Gate Oxide Performance and Reliability |