ECSCRM 2021 Invited speakers
Vladimir DYAKONOV
“Engineering and coherent control of silicon vacancy defects in SiC“
Professor Vladimir Dyakonov has been the Chair of Experimental Physics at the Julius Maximilians University of Würzburg (Germany) since 2004. He studied physics at the University of St. Petersburg and received his Ph.D. from the A. F. Ioffe Physical-Technical Institute. Since 1990, he has been a visiting scientist at the Universities of Bayreuth (Germany), Antwerp (Belgium), and Linz (Austria). He completed his habilitation in experimental physics at the University of Oldenburg (Germany) in 2001. Dyakonov’s main research interests are in the areas of spin-sensitive semiconductor spectroscopy and the physics of solar cells and light-emitting diodes.
Alex ELLISON
“Dislocation density evolution in PVT growth of 150 and 200 mm SiC”
Alexandre Ellison is Director of R&D at STMicroelectronics Silicon Carbide AB, Sweden. He has been working with development and industrialization of SiC materials for the last 26 years with emphasis on crystal growth by CVD and PVT techniques and on structural characterization. He was one of the co-founders of Norstel in 2005, a SiC wafer maker acquired by STMicroelectronics in 2019. He received his Ph.D. in 1999 from the INP of Grenoble (France) and from Linköping University (Sweden) where he pioneered the development of the SiC High Temperature CVD technique with Prof. Janzén’s group. He holds an Engineering Diploma from Centrale-Supélec (1994) and a M.Sc. in Microelectronics from the University of Paris VI.
Philippe GODIGNON
“Edge terminations for 4H-SiC power devices: a review”
Prof. Philippe Godignon obtained in PhD in Electronics Engineering from the Institut des Sciences Appliquées de Lyon (INSA) in 1993. He joined the power group of CNM-CSIC in 1990 during his PhD, where he developed most of his research carrier. Since 1990, he has been mainly working on Si and SiC IGBT/VDMOS devices design and technologies as well as on GaN on Si HEMT and more recently on Diamond power diodes. As head of the Wide Band Gap group, his competences cover the power devices and integrated circuits technological and electrical modelling, technological process development as well as the electro-thermal characterisation. More recently, he has also been working on Carbon based materials synthesis and processing (CNT, graphene and polymers) for nanotechnologies and biosensors. He published 195 papers in international per review journals and is co-author of 183 contributions to international and national conferences. In 2017, he is co-editor of a book on epitaxial graphene. He also co-authored 13 patents and participate to the creation of 2 spin-off companies, Caly Technologies and Graphene Nanotech. He supervised 16 PhD students. He is member of the steering committee of the ECSCRM conference.
Mike JENNINGS
“MOSFET advanced process technology for heteroepitaxy and bulk 3C-SiC wafers”
An interest in advanced power devices led him to undertake a Ph.D, which he was awarded from the University of Warwick, Coventry, U.K., in 2008. The manufacturing-focus of his research allowed him to establish a strong industrial network. This naturally progressed to a five-year Senior Science City Research Fellowship, where he provided business assistance to numerous industrial partners from the semiconductor, power electronics and energy industry sectors. His main research interest lies in the field of new semiconductor materials for power electronics applications. His current research interests include silicon carbide and gallium oxide power devices and the manufacturability of advanced silicon MOSFETs and IGBTs. He currently holds a Royal Academy of Engineering Industrial Fellowship (3 years), which focusses on bringing the latest power semiconductor devices through to commercialisation. The fellowship position is based at Newport Wafer Fab Ltd., however Mike spends much of his time performing collaborative research across the South Wales Compound Semiconductor Cluster. He was also a principle investigator on a collaborative (industrial and academic partners) €8M Horizon 2020 cubic silicon carbide project, leading the power devices theme.
Lars KNOLL
“Latest advances in the implementation and characterization of high-k gate dielectric in SiC power MOSFETs”
Dr. rer. nat. Lars Knoll received his doctorate in physics from RWTH Aachen University in 2014. During his PhD, he mainly focused on the fabrication, characterization and simulation of energy-efficient electronic switches. In 2014, he moved to the ABB Corporate Research Center in Baden-Dättwil, Switzerland. He focused on wide bandgap power semiconductor switches and diodes and led a team of scientists investigating new concepts for wide bandgap power semiconductor devices in voltage classes from 1.2 kV to 10 kV. Since 2020, he has led SiC chip R&D at Hitachi ABB Powergrids Semiconductors. He is the author and contributor of over 80 publications, patents and patent applications on semiconductor fabrication and designs and is a regular speaker at relevant international conferences in the field of power electronics.
Francesco LA VIA
“New approaches and new understanding in the growth of 3C-SiC:from thin film to bulk”
Francesco La Via was born in Catania, Italy, in September 1961. He received the M.S. degree in physics from Catania University, Catania, Italy, in 1985. In 1990, he joined the CNR-IMM. He was responsible of several industrial research projects and now he is coordinator of two European Research Project on the growth of 3C-SiC on silicon and on the applications in the field of power devices (CHALLENGE) and of MEMS for geophysics (SiC nano for picoGeo).
He has published more than 350 papers. He has presented several invited contributions to international conferences and has organized several conferences and tutorials.
Stephen SADDOW
“The Development of a Monolithic Silicon Carbide Neural Interface for Long-Term Human Implantation”
Dr. Stephen E. Saddow received his doctorate in electrical engineering from the University of Maryland at College Park in 1993 and is currently Professor in the Department of Electrical Engineering and Professor in the Department of Medical Engineering at the University of South Florida (USF), Tampa, FL. He also is currently Collaborating Scientist at the Italian Synchrotron Light Source (Elettra, Beamline BEAR); and a Guest Researcher at the National Cancer Institute. He was elected Fellow of the AIMBE for seminal contributions to the field of Silicon Carbide (SiC) Biomedical Technology, significantly advancing in vivo biomedical devices and systems. Dr. Saddow is a Senior Member of the IEEE and National Academy of Inventors and holds more than 15 Patents, mostly on SiC biomedical device technology.
Peter WELLMAN
“Review of Sublimation growth of SiC bulk crystals”
Peter Wellmann is a professor on materials science at the University of Erlangen-Nürnberg (FAU, Germany). He is heading the crystal growth lab at the materials department which is dedicated to modern topics in semiconductor technology, including crystal growth, epitaxy and characterization of various electronic materials for energy saving. The major activities lie in the field of crystal growth and characterization of SiC for power electronic and novel optoelectronic applications. As a Key Enabling Technology (KET) Centre on “FAU – Industrial Services in Crystal Growth of SiC” within the European Union, the activities of the Crystal Growth Lab include fundamental research and development as well as knowledge transfer to industrial partners.
Carl-Mikael ZETTERLING
“Extreme Environment Electronics using SiC Bipolar ICs”
Carl-Mikael Zetterling received the M.Sc.E.E. and Ph.D. degrees from the KTH Royal Institute of Technology, Stockholm, in 1991 and 1997, respectively. In 1997, he joined the Faculty of the School of Electrical Engineering, KTH. He is a Professor of Solid State Electronics since 2005, and since 2018 also head of the division of Electronics and Embedded Systems. From 1995 to 1996, he was an Invited Scholar at the Center for Integrated Systems, Stanford University, Stanford, CA. In 1998, he spent three months as an Invited Professor at Kyoto University, Japan, and again in 2001 for two months at Kyoto Institute of Technology, Japan.
His field of research is process technology and device design of high voltage power devices and high temperature radiation hard analog and digital integrated circuits in SiC. He has coauthored around 280 internationally published articles and conference contributions, including editing one book about process technology for silicon carbide devices, and co-writing one book about plagiarism prevention with Jude Carroll. Prof. Zetterling has served in the Technical Program Committee for the TMS Electronic Materials Conference and the IEEE SISC Conference. He is an Editor for IEEE Journal of Electron Devices Society.
Hidekazu TSUCHIDA
“Recent progress in 4H-SiC CVD growth and defect control”
Dr., Senior Research Scientist, Materials Science Division, Energy Transformation Research Laboratory, Central Research Institute of Electric Power Industry (CRIEPI)
- In 1992, entered CRIEPI.
- In 1994, began research on epitaxial growth and defect control of SiC to realize next generation power devices for high-voltage power transmission and distribution.
- In 2016-2018, chair of the Advanced Power Semiconductors Division of the Japan Society of Applied Physics.
- In 2019, served as technical program committee chair for ICSCRM2019, Kyoto.
Current research topics include fast bulk and epitaxial crystal growth and control of point and extended defects for SiC power devices.
Victor VELIADIS
“SiC mass commercialization: present status and barriers to overcome”
Victor Veliadis received the B.S. degree from the National Technical University of Athens Greece in 1990, and the M.S. and Ph.D. degrees in Electrical and Computer engineering from Johns Hopkins University, Baltimore, MD, USA, in 1992 and 1995, respectively. He is the Chief Executive and CTO of PowerAmerica, which is a U.S Department of Energy WBG power electronics Manufacturing Institute. In this role, he manages an annual budget in excess of $30 million that he strategically allocates to over 35 industrial and University projects to accelerate WBG manufacturing, workforce development, job creation, and clean energy. He is also an ECE Professor at NCSU and an IEEE Fellow and IEEE EDS Distinguished Lecturer. He has given over 70 invited presentations/tutorials, and keynotes at major conferences in India, Korea, China, Europe and the U.S. He has 27 issued U.S. patents, 6 book chapters, and over 120 peer-reviewed technical publications. Prior to entering academia and taking an executive position at Power America in 2016, he spent 21 years in the semiconductor industry where his work included design, fabrication, and testing of 1-12 kV SiC SITs, JFETs, MOSFETs, Thyristors, JBS and PiN diodes, and GaN devices for military radar amplifiers, as well as financial and operations management of a commercial semiconductor fab.
Anant AGARWAL
“Design strategies for rugged power MOSFETs and reliability challenges”
Dr. Agarwal joined The Ohio State University at Columbus, Ohio in August 2017. Previously, he was with the US Department of Energy (DOE) during March 2013 – November 2016. While at DOE, Dr. Agarwal helped create and manage four programs related to wide band-gap technology and their applications including PowerAmerica, Next Generation of Electric Machines (I and II) and Graduate Traineeships. From 1999 to 2013, Dr. Agarwal was R&D Manager for SiC devices at Cree, Inc. In this role, he oversaw the development and commercialization of Silicon Carbide diode and MOSFET power devices.
Previously, Dr. Agarwal was a Fellow at Northrop Grumman Science and Technology Center, Pittsburgh (1990-1999). While at Northrop Grumman he led research activities on radio frequency Silicon and Silicon-Germanium transistors. He was also instrumental in solving a large number of fundamental issues relating to SiC technology.
Prior to joining Northrop Grumman, Dr. Agarwal held various teaching and research positions (1984-1990) including Associate Professor in Allahabad, India and Member of the Technical Staff at AT&T Bell Laboratories, Murray Hill, NJ. While at Bell Labs he was involved in the development of Gallium-Arsenide digital circuits for fiber-optic communications.
Dr. Agarwal received his PhD degree in Electrical Engineering from Lehigh University, Pa in 1984; Masters degree in Electrical Engineering from University of Tennessee Space Institute (UTSI) in 1980; and Bachelor of Science in Electrical Engineering from MNR Engineering College, University of Allahabad, India in 1978. He jointly holds more than 60 patents, has co-authored more than 300 research papers, co-edited a book on Silicon Carbide Technology, co-authored five book chapters and was elected an IEEE Fellow in January 2012 for his life time contributions to Wide Band Gap technologies.
Nguyen SON
“Identification of deep levels of the carbon antisite-vacancy defect in 4H-SiC”
Nguyen Tien Son is a professor in Semiconductor Materials at Linköping University. He received his PhD on magnetic resonance of point defects in Si from the University of Amsterdam in 1993. Since then, he has been working with defect characterization and fundamental properties of different wide-bandgap semiconductors (SiC, III-nitrides and Ga2O3) with focusing on development of SiC materials. Since the last decade, he has also been active in development of spin-active optical centers in SiC for applications in quantum technology.
Keita TACHIKI
“Mobility improvement in 4H-SiC MOSFETs by H2 etching before SiO2 deposition and interface nitridation”
Keita Tachiki received the M.E. degree from Kyoto University, Kyoto, Japan, in 2019.
He is currently pursuing the Ph.D. degree with Kyoto University, Kyoto, Japan.
His current research interests include fabrication of SiC MOS structure and short-channel effects in SiC MOSFETs.
