ECSCRM 2021 Plenary speakers
John Palmour (CTO, Wolfspeed)
“Driving SiC into the Mainstream”
Dr. John W. Palmour is the Chief Technology Officer for Cree | Wolfspeed. He directs and conducts the power Device, microwave device, and materials development for Wolfspeed. He was one of the co-founders of Cree in 1987, and served on the Board of Directors for the company from 1995 to 2010. Dr. Palmour has been a leader in SiC and GaN device development for the last 34 years, and has demonstrated numerous firsts in these technology areas. He has been responsible for the development of high voltage, 4H-SiC power transistors and diodes, as well as high frequency GaN HEMTs and MMICs. During his career, he has authored or co-authored more than 385 publications and is a co-inventor on 77 U.S. patents. Dr. Palmour received his B.S. and Ph.D. degrees from North Carolina State University, Raleigh, in 1982 and 1988, respectively, where his major was in Materials Science and Engineering. Dr. Palmour became a Fellow of the IEEE in 2013.
Pr. Tsunenobu Kimoto (Kyoto University)
“A New Horizon of SiC Technology Driven by Deeper Understanding of Physics”
Tsunenobu Kimoto received the M.E. degree in Electrical Engineering from Kyoto University in 1988 and joined Sumitomo Electric Industries, Ltd., where he was involved in development of amorphous Si solar cells. In 1990, he started his academic career at Kyoto University and received the Ph.D. degree in 1996, based on his work on SiC epitaxy, characterization, and high-voltage diodes. He is currently a Professor at Department of Electronic Science and Engineering, Kyoto University. His main research activity includes SiC electron devices (high-voltage, high-temperature) and materials science of SiC. He has been also involved in carrier transport in semiconductor nanowires and resistive switching materials. He is a Fellow of IEEE and JSAP.
Mario Giuseppe Saggio (STMicroelectronics)
“Designing SiC devices for the transition to e-mobility”
Mario Giuseppe Saggio obtained his Physics Degree at the University of Catania in 1991 and worked as a researcher for Italian and German institutes before joining the New Power Devices Design R&D group at STMicroelectronics in 1995.
Mario began pioneering Silicon Carbide (SiC) research in 1997 and has headed the R&D and product development team for Silicon Carbide Discrete and Modules since 2017.
In these 25 years of research and development at ST, Mario has registered 40 patents and has authored or coauthored more than 50 papers for international journals and conferences.