ECSCRM 2021 Tutorial day
Sunday 24th October, 2021
1990-2020: 30 years of SiC device development
From technology to applications
(Six 1-hour talks)
Historical evolution of SiC material through the lens of bulk and epitaxial growth
Speaker: Didier CHAUSSENDE (SIMAP)
Didier Chaussende received his PhD in Inorganic Chemistry from the University of Lyon in 2000. He then worked three years as R&D engineer in a company. He entered CNRS (University of Grenoble Alpes) as research scientist in 2003 and as research director in 2014 to develop academic activities on physical-chemistry of high temperature advanced materials. His main focus was on carbides (SiC), nitrides AlN) and MAX phases crystal growth, implementing a global approach which addressed all the scientific and technological building blocks necessary for a full understanding and monitoring of crystal growth. After a sabbatical year in 2017 at Neel Institute to work on diamond heteroepitaxy by MPCVD, and at the University of Tokyo on SiC solution growth, he joined SIMaP Lab. from the University of Grenoble Alpes. He has studied various synthesis processes for SiC, both the vapor phase and from the liquid phase (CVD, PVT, LPE, TSSG). He has published about 150 publications and proceedings and is currently a member of the ICSCRM steering committee. He has been involved in 10+ national and international projects as PI, some of them as coordinator.
How SiC technology has been matured for power devices across the last 3 decades
Speaker: Dethard PETERS (Infineon)
Dethard Peters got diploma for electrical engineering at Technical University of Braunschweig in Germany 1986 and received his PhD (Dr.-Ing.) from the Technical University of Hamburg-Harburg in 1991. With the focus on new semiconductors he joined Siemens Corporate Technology, later SiCED and since 2012 Infineon. He has large experience in R&D of SiC technology, power devices and managed many SiC technology development projects. Currently he is working as Expert for SiC MOSFETs with the focus on chip and technology design.
Present Status of SiC Materials and Characterization
Speaker: Peder Bergman (Linköping University and STMicroelectronics SiC AB)
Peder Bergman is professor in Semiconductor Materials at Linköping University, and has been active in the research of SiC for more than 25 years. He has been working with different material characterization, studies of device critical defects as well as with growth and development of SiC materials. He has also been working with material development and strategic research at ST Microelectronics SiC AB in Sweden.
Contacts, doping & MOS interfaces: An overview of processing issues in SiC device technology
Speaker: Fabrizio Roccaforte (CNR-IMM)
Fabrizio Roccaforte received the M.Sc. Degree in Physics from the University of Catania (1996), and the PhD from the University of Göttingen (1999). After working on SiC Schottky diodes development at STMicroelectronics, in 2001 he joined as a Researcher the permanent staff of CNR-IMM in Catania. His research interests are focused on wide band gap (WBG) semiconductor materials (e.g. SiC and GaN) and devices processing for power electronics devices. He is co-author of more than 300 publications in international journals and proceedings, 8 book chapters and 5 patents. He is or has been responsible for the CNR-IMM unit of several European and National projects, and industrial research contracts. In 2015, he has been the General Chair of the International Conference on Silicon Carbide and Related Materials (ICSCRM2015)
How is SiC a game changer for high power applications?
Speaker: Michel Piton (Alstom Tarbes)
Michel Piton received his engineer diploma in ENSIEG (INP Grenoble) in 1990 and joined ALSTOM as a Power Electronics engineer. He contributed to the design of the first Alstom Si IGBT based traction drives ONIXTM and occupied different positions within Traction System Engineering Department related to power converter design and validation. Since 2015, he is Master Expert in Power Electronics/semi-conductor power devices and is managing in-house and collaborative R&D projects focused on the introduction of new SiC MOSFET modules. He is representing Alstom at the European Centre for Power Electronic (ECPE) as a member of Project Coordination Committee. Since 2020, he is partially in secondment to IRT Saint-Exupéry (Toulouse) to work on the ANR project SiCRET (SiC Reliability Evaluation for Transport).
Silicon Carbide resonating sensors
Speaker: Rebecca Cheung (University of Edinburgh)
Rebecca Cheung received her undergraduate and PhD degrees in Electronics and Electrical Engineering from the University of Glasgow, U.K., in 1986 and 1990, respectively. During her PhD, she was a Visiting Researcher with IBM Thomas J. Watson Research Center, Yorktown Heights, USA. She joined the University of Edinburgh in 2000 and is currently Chair of Nanoelectronics and Head of the Research Institute for Integrated Micro and Nano Systems in the School of Engineering. She has an international reputation for her contribution in the development and application of micro- and nano-fabrication. Her major research interests to date span: micro- nano- fabrication technology; process-related defects; microwave electronics; low dimensional structures and optical spectroscopy. More recently, her research focuses on micro-resonators and microelectromechanical systems. She is a Fellow of the Royal Society of Edinburgh, served as program chair for EIPBN 2013, and chaired the IEEE/RSE James Clerk Maxwell Medal Committee in 2020.